mrfg35003nt1 MRFG35003MT1 bwa 1 rf reference design data freescale semiconductor rf reference design library gallium arsenide phemt rf power field effect transistors device characteristics (from device data sheet) designed for wll/mmds/bwa or umts driver applications with frequencies from 1.8 to 3.6 ghz. devices are unmatched and are suitable for use in class ab linear base station applications. ? typical w - cdma performance: - 42 dbc acpr, 3.55 ghz, 12 volts, i dq = 55 ma, 5 mhz offset/3.84 mhz bw, 64 dpch (8.5 db p/a @ 0.01% probability) output power ? 300 mwatt power gain ? 11.5 db efficiency ? 25% ? 3 watts p1db @ 3.55 ghz ? excellent phase linearity and group delay characteristics ? high gain, high efficiency and high linearity ? n suffix indicates lead - free terminations reference design characteristics ? typical single - channel w - cdma performance: - 45 dbc acpr, 2.45 ghz, 12 volts, i dq = 55 ma, 5 mhz offset/3.84 mhz bw, 64 dpch (8.5 db p/a @ 0.01% probability) output power ? 350 mwatt power gain ? 12.5 db efficiency ? 26% mrfg35003nt1(mt1) bwa 2.4 - 2.5 ghz reference design designed by: monte miller and rick hooper this reference design is designed to demonstrate the typi- cal rf performance characteristics of the mrfg35003nt1(mt1) when applied for the 2.4 - 2.5 ghz w - cdma frequency band. the reference design is tuned for the best tradeoff between good w - cdma linearity and good power capability and efficiency. reference design library terms and conditions freescale is pleased to make this reference design available for your use in development and testing of your own product or products, wit hout charge. the reference design contains easy - to - copy, fully functional amplifier designs. where possible, it c onsists of ?no tune? distrib- uted element matching circuits designed to be as small as possible, includes temperature compensated bias circuit- ry, and is designed to be used as ?building blocks? for our customers. heatsinking when operating this fixture please provide adequate heat- sinking for the device. excessive heating of the device will prevent repeating of the included measurements. nonlinear simulation to aid the design process and help reduce time to market for our customers, freescale provides device models for several commercially available harmonic balance simulators. our model library is available for all major computer platforms supported by these simulators. for details on the rf model library and supported harmonic balance simulators, go to the following url: http://www.freescale.com/rf/models available at http://www.freescale.com/rf, go to tool s rev. 1, 6/2005 freescale semiconductor technical data mrfg35003nt1 MRFG35003MT1 bwa bwa 2.4 - 2.5 ghz rf output rf input matc h matc h bias v dd v gg bias ? motorola, inc. 2003 ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf reference design data freescale semiconductor mrfg35003nt1 MRFG35003MT1 bwa figure 1. mrfg35003nt1(mt1) bwa reference design schematic z7 0.045 x 0.100 microstrip z9 0.200 x 0.040 microstrip z10 0.260 x 0.020 microstrip z11 0.200 x 0.516 microstrip z12 0.044 x 0.534 microstrip pcb rogers 4350, 0.020 , r = 3.50 z1, z13 0.044 x 0.295 microstrip z2 0.044 x 0.730 microstrip z3 0.105 x 0.045 microstrip z4 0.044 x 0.015 microstrip z5 0.340 x 0.320 microstrip z6, z8 0.146 x 0.070 microstrip c9 rf input rf output r1 c8 c7 c6 c5 c14 c13 c12 c11 c10 c4 c15 z7 l2 c17 c2 c1 c18 z1 z2 z3 z8 z10 z9 z11 z12 z13 v dd v gs z6 z4 z5 l1 c3 c16 table 1. mrfg35003nt1(mt1) bwa reference design component designations and values part description value, p/n or dwg manufacturer c1 3.9 pf chip capacitor 08051j3r9bbt avx c2 0.9 pf chip capacitor 08051j0r9bbt avx c3, c16 10 pf chip capacitors 100a100jp150x atc c4, c15 100 pf chip capacitors 100a101jp150x atc c5, c14 100 pf chip capacitors 100b101jp500x atc c6, c13 1000 pf chip capacitors 100b102jp500x atc c7, c12 0.1 f chip capacitors cdr33bx104akws kemet c8, c11 39k pf chip capacitors 200b393kp500x atc c9, c10 22 f tantalum capacitors t491x226k035as newark c17 1.0 pf chip capacitor 08051j1r0bbt avx c18 15.0 pf chip capacitor 08051j15r0gbt avx l1 4.7 nh chip inductor ll2102- f4n7k toko l2 8.2 nh chip inductor ll1608- fhn2k toko r1 75 , 1/4 w 1% chip resistor d55342m07b75jor newark
mrfg35003nt1 MRFG35003MT1 bwa 3 rf reference design data freescale semiconductor figure 2. mrfg35003nt1(mt1) bwa reference design component layout rev 1 mrfg35003m c16 c14 c15 c13 c12 c11 c10 c18 c1 c2 c17 c3 c5 c4 c6 c8 c7 c9 r1 l1 l2 freescale has begun the transition of marking printed circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
4 rf reference design data freescale semiconductor mrfg35003nt1 MRFG35003MT1 bwa characteristics 1 4 18 0.1 10 45 p out , output power (watts) figure 3. transducer gain and power added efficiency versus output power g t , transducer gain (db) pae, power added efficiency (%) g t pae mrfg35003m @ 2.5 ghz v ds = 12 vdc, i dq = 55 ma f = 2.5 ghz, 8.5 p/a 3gpp w?cdma s = 0.857 ?136.97 l = 0.681 ?178.94 16 40 14 35 12 30 10 25 820 615 1 ?60 0 0.1 ?60 0 irl acpr p out , output power (watts) figure 4. w - cdma acpr and input return loss versus output power irl, input return loss (db) acpr, (dbc) mrfg35003m @ 2.5 ghz v ds = 12 vdc, i dq = 55 ma f = 2.5 ghz, 8.5 p/a 3gpp w?cdma s = 0.857 ?136.97 , l = 0.681 ?178.94 ?10 ?10 ?20 ?20 ?30 ?30 ?40 ?40 ?50 ?50 note: data in figures 3 and 4 is generated from load pull, not from the test circuit shown. note: data in figures 5 and 6 is generated from the test circuit shown. 1 6 16 0.01 0 50 g t pae p out , output power (watts) figure 5. transducer gain and power added efficiency versus output power g t , transducer gain (db) pae, power added efficiency (%) mrfg35003m @ 2.45 ghz v ds = 12 vdc, i dq = 55 ma 8.5 p/a 3gpp w?cdma 0.1 14 40 12 30 10 20 810 1 ?60 0 0.01 ?60 0 irl acpr p out , output power (watts) figure 6. w - cdma acpr and input return loss versus output power irl, input return loss (db) acpr (dbc) mrfg35003m @ 2.45 ghz v ds = 12 vdc, i dq = 55 ma 8.5 p/a 3gpp w?cdma 0.1 ?10 ?10 ?20 ?20 ?30 ?30 ?40 ?40 ?50 ?50
mrfg35003nt1 MRFG35003MT1 bwa 5 rf reference design data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com available at http://www.freescale.com/rf, go to tool s rev. 1, 6/2005
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